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The AM4940N is a dual N-Channel MOSFET manufactured by Analog Power Inc. It features a drain-to-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 8.3 A at 25°C ambient temperature. The device supports a power dissipation of 2.1 W at the same ambient condition. It is housed in an 8-SO surface-mount package. The operating junction temperature range extends from -55°C to 150°C. The technology utilized is Metal Oxide Semiconductor Field Effect Transistor (MOSFET).
Verify the specific datasheet revision and package variant when sourcing, as manufacturers may update pin configurations or thermal characteristics over time. Confirm that the supplier provides original manufacturer documentation to ensure the component matches the AM4940N specifications exactly. Cross-reference the part number with official Analog Power Inc. catalogs to avoid counterfeit or obsolete stock issues during procurement.
Select this component when a dual N-Channel MOSFET with 40 V rating and 8.3 A current capacity is required in an 8-SO package. Ensure the application's thermal environment allows for 2.1 W dissipation at 25°C or implement adequate heat sinking. Verify that the drive voltage requirements align with the MOSFET's gate threshold specifications for efficient switching performance.
Analog Power Inc. produces power management components, including MOSFETs like the AM4940N. This series targets surface-mount applications where space efficiency and dual-channel functionality are beneficial. The company maintains offices in California, Hong Kong, and Taiwan, supporting global distribution of these semiconductor devices for industrial and consumer electronics markets.
Consult official Analog Power Inc. substitution guides for verified equivalents. Generic replacements must match the 40 V Vdss, 8.3 A Id, and 8-SO package dimensions. Verify electrical parameters such as Rds(on) and gate charge before substituting to ensure circuit compatibility.
The maximum operating junction temperature is 150°C.
It is a dual N-Channel MOSFET.