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The AM4998N is a dual N-channel MOSFET manufactured by Analog Power Inc. It features a 30-V drain-source voltage rating and a maximum gate-source voltage of ±20 V. The device supports a continuous drain current of 6.5 A at 25°C, with an on-resistance (rDS(on)) of 32 mΩ at VGS = 10V and 40 mΩ at VGS = 4.5V. Packaged in an SO-8 format, it utilizes trench technology for low thermal impedance and fast switching capabilities.
Verify the manufacturer designation as Analog Power Inc. when sourcing components. Confirm the specific package type matches the required PCB footprint. Ensure the part number corresponds to the dual N-channel variant rather than complementary or single-channel alternatives within the same series.
Select this component for designs requiring dual N-channel isolation in a compact form factor. Evaluate the 32 mΩ on-resistance against thermal dissipation requirements at the target operating current. Verify that the 30-V breakdown voltage exceeds the maximum circuit voltage with adequate safety margin.
This component belongs to the Analog Power AM49xx series of dual MOSFETs. These devices are designed to replace discrete dual-transistor solutions, saving board space. The series typically offers optimized trade-offs between on-resistance and gate charge for general-purpose switching.
Check for direct pin-compatible replacements within the Analog Power AM49xx family. Verify that alternative dual N-channel MOSFETs from other manufacturers meet the 30-V VDS and 6.5-A ID specifications.