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Product Detailed Parameters
- Description：MOSFET N-CH 30V 50.7A TO-251
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：50.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1299 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：50W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251 (IPAK)
- Package / Case：TO-251-3, IPak, Short Leads
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Overview
The AM50N03-12I is a single N-channel MOSFET manufactured by Analog Power Inc. It utilizes a TO-251 package and operates with a maximum drain-source voltage of 30 V and a continuous drain current of 20 A. The device features a typical on-resistance of 13 mΩ at a gate-source voltage of 10 V, ensuring efficient power handling. Its maximum power dissipation capability is rated at 50 W, supporting thermal management in compact surface-mount applications.
Feature Summary
- Single N-channel MOSFET configuration for dedicated switching tasks
- TO-251 surface-mount package design for space-constrained layouts
- Low on-resistance characteristic to minimize conduction losses
- High current carrying capacity suitable for power regulation
Applications
- DC-DC converter circuits
- Power supply switching modules
- Motor control driver stages
Procurement Notes
Verify the specific manufacturer documentation for the AM50N03-12I to confirm exact electrical tolerances and thermal characteristics before integration. Ensure that the sourcing channel provides authentic components matching the official datasheet specifications to maintain circuit reliability and performance standards.
Selection Notes
Select this component when a single N-channel MOSFET with a 30 V rating and 20 A current capacity is required in a TO-251 package. Consider its 13 mΩ on-resistance for efficiency needs and the 50 W power dissipation limit for thermal design constraints within the target application environment.
Part Context
This part belongs to the Analog Power Inc. MOSFET portfolio, specifically designed for power management applications. It serves as a discrete semiconductor switch within electronic systems, offering a balance of voltage blocking capability and current handling in a standard surface-mount form factor for industrial and consumer electronics.
Replacement Considerations
Consult official substitution guides or manufacturer cross-reference lists to identify compatible alternatives. Verify that any substitute matches the 30 V, 20 A, and TO-251 package requirements without altering circuit functionality.
