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Product Detailed Parameters
- Description：MOSFET N-CH 30V 22A DFN5X6
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.5mOhm @ 15.2A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1835 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DFN5x6
- Package / Case：DFN5x6
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Overview
The AM7438N is an N-Channel MOSFET manufactured by Analog Power Inc. It features a drain-source voltage rating of 30 V and a continuous drain current of 22 A at ambient temperature. The device dissipates 5 W of power under similar conditions. It is housed in an 8-DFN (5x6) surface-mount package with an exposed pad. Key electrical parameters include a gate-source threshold voltage minimum of 1 V, a maximum gate-body breakdown voltage of ±20 V, a typical gate charge of 21 nC at 4.5 V, and a maximum input capacitance specified at the rated drain-source voltage.
Feature Summary
- N-Channel enhancement mode construction for efficient switching applications
- Surface-mount 8-DFN package design with exposed thermal pad for improved heat dissipation
- Low gate charge characteristics to support high-frequency operation
Applications
- DC-DC converter circuits requiring low-voltage switching
- Power management modules utilizing surface-mount assembly
- Battery protection systems operating within 30 V limits
Procurement Notes
Verify the specific datasheet revision and parameter tolerances directly from Analog Power Inc. documentation before integration. Confirm that the 8-DFN footprint matches the target PCB layout, particularly regarding the exposed pad thermal requirements. Ensure the selected component meets all thermal derating guidelines for the intended ambient temperature conditions.
Selection Notes
Select this component when a 30 V N-Channel MOSFET with 22 A continuous current capability is required in a compact surface-mount form factor. Consider the 5 W power dissipation limit and the necessity of adequate thermal grounding through the exposed pad. Evaluate the gate charge specifications against the driving circuit's speed requirements to ensure optimal switching performance.
Part Context
This component belongs to the single FET and MOSFET category produced by Analog Power Inc., a company established in 2002 specializing in power management solutions. The manufacturer maintains operations in California, Hong Kong, and Taiwan. The AM7438N represents their discrete semiconductor offerings designed for surface-mount technology applications.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Cross-referencing requires independent verification of pinout compatibility, electrical ratings, and thermal characteristics with alternative manufacturers.
