AM90N04-02P

AM90N04-02P

$1.81
  • Description:MOSFET N-CH 40V 232A TO-220
  • Series:-
  • Mfr:Analog Power Inc.
  • Package:Bulk

SKU:3e2ba0f97829 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 40V 232A TO-220
  • Series:-
  • Mfr:Analog Power Inc.
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:232A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:2.3mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:65 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:7019 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):300W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

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AM90N04-02P

Overview

The AM90N04-02P is a single N-channel silicon MOSFET manufactured by Analog Power Inc. It features a drain-source voltage (VDS) rating of 40 V and a gate-source voltage (VGS) maximum of ±20 V. The device supports a continuous drain current (ID) of 90 A at case temperature, with a pulsed current capability of 232 A (Tc). On-resistance (RDS(on)) is specified at 2.3 mΩ. Thermal performance includes a power dissipation rating of 300 W (Tc) and a junction-to-case thermal resistance of 0.52 °C/W. The component utilizes a TO-220 through-hole package.

Feature Summary

  • Utilizes high cell density trench process technology for low on-resistance
  • Designed to ensure minimal power loss and heat generation
  • Optimized for efficient switching in power applications

Applications

  • DC-DC converters
  • Load point regulators
  • Motor control systems

Procurement Notes

Verify the specific suffix '02P' against official Analog Power documentation to confirm the exact pinout and thermal characteristics associated with this TO-220 variant. Ensure that sourcing channels provide genuine components from authorized distributors to maintain reliability standards for power management circuits.

Selection Notes

Select this component for designs requiring robust N-channel switching with a 40 V breakdown voltage. The TO-220 package facilitates effective heat dissipation for high-current applications up to 90 A. Consider the 2.3 mΩ on-resistance for efficiency requirements in low-voltage power distribution networks.

Part Context

This part belongs to Analog Power Inc.'s portfolio of single FETs and MOSFETs. The manufacturer specializes in power management solutions, offering devices with ultra-low RDS(on) across various packages including DFN, SO-8, DPAK, and TO-220. The AM90N04-02P represents their standard discrete power transistor offerings.

Replacement Considerations

The datasheet references AM90N04-02B as a related variant within the same product family. Verify pin compatibility and specific electrical tolerances before substituting.

AM90N04-02PAM90N04-02P
$1.81
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