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The AM90N04-02P is a single N-channel silicon MOSFET manufactured by Analog Power Inc. It features a drain-source voltage (VDS) rating of 40 V and a gate-source voltage (VGS) maximum of ±20 V. The device supports a continuous drain current (ID) of 90 A at case temperature, with a pulsed current capability of 232 A (Tc). On-resistance (RDS(on)) is specified at 2.3 mΩ. Thermal performance includes a power dissipation rating of 300 W (Tc) and a junction-to-case thermal resistance of 0.52 °C/W. The component utilizes a TO-220 through-hole package.
Verify the specific suffix '02P' against official Analog Power documentation to confirm the exact pinout and thermal characteristics associated with this TO-220 variant. Ensure that sourcing channels provide genuine components from authorized distributors to maintain reliability standards for power management circuits.
Select this component for designs requiring robust N-channel switching with a 40 V breakdown voltage. The TO-220 package facilitates effective heat dissipation for high-current applications up to 90 A. Consider the 2.3 mΩ on-resistance for efficiency requirements in low-voltage power distribution networks.
This part belongs to Analog Power Inc.'s portfolio of single FETs and MOSFETs. The manufacturer specializes in power management solutions, offering devices with ultra-low RDS(on) across various packages including DFN, SO-8, DPAK, and TO-220. The AM90N04-02P represents their standard discrete power transistor offerings.
The datasheet references AM90N04-02B as a related variant within the same product family. Verify pin compatibility and specific electrical tolerances before substituting.