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Product Detailed Parameters
- Description：MOSFET N-CH 80V 90A TO-263
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6.5V, 10V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：167 nC @ 6.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：11678 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AM90N08-04B is an N-channel power MOSFET from Analog Power Inc. featuring a drain-source voltage (VDS) of 80 V and a continuous drain current (ID) of 90 A at 25°C case temperature. It utilizes low RDS(on) trench technology, achieving a maximum on-resistance of 4.5 mΩ at VGS = 10 V and 6 mΩ at VGS = 6.5 V. The device supports a pulsed drain current of 360 A and offers a power dissipation rating of 300 W. Thermal resistance values are specified as 0.5 °C/W junction-to-case and 62.5 °C/W junction-to-ambient.
Feature Summary
- Low on-state resistance achieved through advanced trench technology
- High thermal conductivity with minimal junction-to-case thermal impedance
- Optimized for rapid switching operations
Applications
- White LED boost converters
- Automotive systems
- Industrial DC/DC conversion circuits
Procurement Notes
Verify the specific package type against the datasheet before ordering, as suffixes may indicate variations in tape-and-reel packaging or lead-free status. Confirm that the intended operating environment remains within the -55 to 175 °C junction temperature range. Ensure gate drive voltages do not exceed the ±20 V absolute maximum rating to prevent dielectric breakdown. Validate thermal management solutions to maintain safe operating area limits during high-current pulses.
Selection Notes
Select this component when designing circuits requiring high efficiency at moderate voltage levels up to 80 V. The low gate charge characteristics make it suitable for high-frequency switching applications where minimizing driver losses is critical. Consider the 90 A continuous current capability for robust load handling in industrial power stages. Evaluate the thermal performance based on the specific PCB copper area available for heat dissipation.
Part Context
This part belongs to the Analog Power N-channel MOSFET family designed for general-purpose power switching. It complements other devices in the series by offering a balance between voltage blocking capability and conduction losses. The TO-263 package provides a cost-effective solution for surface-mount assembly while maintaining adequate thermal performance for medium-power applications.
Replacement Considerations
Check pinout compatibility and thermal resistance ratings when substituting with similar 80-V N-channel MOSFETs. Verify that alternative components meet or exceed the 4.5 mΩ on-resistance requirement at the target gate drive voltage.
