AMC2M0025120D

$81.12

Description：SICFET N-CH 1200V 20A TO-247
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:242ba119e58b Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V 20A TO-247
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V, 20V
Rds On (Max) @ Id, Vgs：40mOhm @ 5A, 20V
Vgs(th) (Max) @ Id：2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 7 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2256 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：500W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

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AMC2M0025120D

Overview

The AMC2M0025120D is a single N-channel Silicon Carbide (SiC) MOSFET manufactured by Analog Power Inc. It features a drain-to-source voltage rating of 1200V and an on-resistance of 25 mOhm. The device supports a continuous drain current of 20A at case temperature, with a pulsed current capability of 40A. It is housed in a TO-247 through-hole package designed for high-power applications.

Feature Summary

Utilizes Silicon Carbide technology for superior thermal performance and switching efficiency compared to traditional silicon devices.

Applications

High-frequency power conversion systems
Industrial motor drives
Uninterruptible power supplies

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct pinout and thermal characteristics. Confirm that the component status remains active before finalizing procurement plans. Ensure all handling procedures comply with electrostatic discharge protection standards during storage and assembly.

Selection Notes

Select this component when designing circuits requiring high voltage blocking capabilities combined with low conduction losses. The TO-247 package facilitates effective heat dissipation for high-current applications. Evaluate thermal management requirements carefully to maintain junction temperatures within specified limits during operation.

Part Context

This part belongs to the Analog Power Inc. SiC FET family, which focuses on high-voltage discrete semiconductors. These components are engineered to replace silicon-based solutions in demanding power electronics environments where efficiency and reliability are critical design parameters.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pin compatibility and electrical specifications before replacing existing designs with other manufacturers' parts.