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Product Detailed Parameters
- Description：MOSFET N-CH 150V 90A TO-263
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：55 nC @ 6.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4329 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AMIB075N15N3 is an N-Channel MOSFET manufactured by Analog Power Inc. It features a drain-source voltage (VDS) of 150 V and a continuous drain current (ID) of 90 A at case temperature of 25°C. The device has a maximum gate-source voltage (VGS) of ±20 V and a power dissipation rating of 300 W at TC=25°C. It is housed in a surface-mount TO-263 package.
Feature Summary
- Single N-Channel enhancement mode transistor
- Surface-mount TO-263 package configuration
Applications
- Power switching circuits
- DC-DC converter designs
- Motor control applications
Procurement Notes
Verify the manufacturer designation as Analog Power Inc. when sourcing this component. Confirm the specific package type is TO-263 for surface mount implementation. Ensure the part number matches exactly to avoid confusion with similar suffixes from other manufacturers like Infineon. Check datasheet revisions for any parameter updates before finalizing design integration.
Selection Notes
Select this component for applications requiring 150 V blocking capability and high current handling up to 90 A. The TO-263 package facilitates thermal management for power dissipation up to 300 W under specified conditions. Consider the ±20 V gate drive requirement for proper switching operation. Evaluate thermal resistance characteristics relative to the intended heatsinking strategy.
Part Context
This component belongs to the category of single N-Channel MOSFETs designed for power management. Analog Power Inc. produces these devices focusing on low on-resistance performance across various packages including DFN and SO types. The AMIB075N15N3 specifically targets higher current applications compared to lower-rated variants in the same product family.
Replacement Considerations
Infineon Technologies offers the IPA075N15N3 G as a comparable N-Channel MOSFET with similar 150 V specifications, though it utilizes a TO-220FP-3 through-hole package rather than the TO-263 surface-mount form factor. Verify pinout compatibility and thermal requirements when substituting.
