AML2002

Single Bipolar Transistors Overview

The AML2002 is a single NPN bipolar transistor manufactured by onsemi, housed in a TO-126ML package. It features a collector-to-emitter voltage (VCEO) of 200 V and a continuous collector current (IC) rating of 0.7 A. The device offers a low collector-to-emitter saturation voltage of 0.125 V typical at IC=0.35 A and a high-speed switching fall time of 70 ns typical at IC=0.3 A. Electrical characteristics include a DC current gain (hFE) range of 200 to 560 at IC=100 mA and a gain-bandwidth product (fT) of 120 MHz.

Single Bipolar Transistors Feature Summary

• Features a plastic-covered heat sink design that eliminates the need for an insulator during mounting
• Provides low collector-to-emitter saturation voltage for efficient power handling
• Supports high-speed switching applications with fast turn-off characteristics

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Power supply designs requiring high voltage isolation
• Driver stages for loads operating within specified current limits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering information matches the required package and shipping memo details. Confirm that the component meets Pb-Free standards as indicated in the official documentation. Ensure that the minimum packing quantity aligns with procurement requirements before finalizing orders. Cross-reference the marking code L2002 to validate authenticity upon receipt.

Single Bipolar Transistors Selection Notes

Select this component when a 200 V breakdown voltage and 0.7 A continuous current capability are required. Consider the TO-126ML package for applications where direct mounting without an insulator is preferred. Evaluate the low saturation voltage and switching speed against circuit requirements to ensure compatibility with load conditions and thermal management strategies.

Single Bipolar Transistors Part Context

This NPN silicon transistor belongs to the general-purpose discrete semiconductor category from onsemi. It utilizes a monolithic planar structure designed for robust performance in medium-power applications. The device is optimized for switching operations, balancing voltage withstand capabilities with efficient conduction characteristics in standard through-hole configurations.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides or cross-reference databases for verified equivalent part numbers. Ensure any replacement maintains identical pinout configuration, voltage ratings, and package dimensions. Verify that alternative components meet the same electrical specifications and thermal requirements.

Single Bipolar Transistors FAQ

What is the maximum collector-to-emitter voltage rating?

The maximum collector-to-emitter voltage (VCEO) is rated at 200 V.

Does the package require an insulator for mounting?

No, the plastic-covered heat sink design eliminates the need for an insulator when mounting the device.

What is the typical fall time for switching applications?

The typical fall time (tf) is 70 ns when measured at a collector current of 0.3 A.