AMPMZ350UPEP

$0.26

Description：MOSFET N-CH 20V 0.9A SOT-883
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:893cb8fc20e6 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 20V 0.9A SOT-883
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：310mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：54 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：400mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-883
Package / Case：SC-101, SOT-883

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AMPMZ350UPEP

Overview

The AMPMZ350UPEP is a P-channel enhancement mode Field-Effect Transistor (FET) manufactured by Analog Power Inc. It features a 20 V drain-source voltage rating and supports a continuous drain current of 900 mA at ambient temperature. The device is housed in a surface-mount SOT-883 package with a maximum power dissipation of 400 mW.

Feature Summary

Utilizes P-channel enhancement mode technology for switching applications
Designed for surface-mount installation in compact circuits

Applications

Relay driver circuits
High-speed line drivers
High-side load switches

Procurement Notes

Verify the manufacturer designation carefully, as similar part numbers exist from other vendors such as Nexperia. Confirm that the specific suffix matches the required Analog Power Inc. component specifications before finalizing procurement orders to ensure compatibility.

Selection Notes

Select this component for low-voltage switching tasks requiring a P-channel configuration. Ensure the application operates within the 20 V limit and 900 mA current constraint. Verify thermal management capabilities are sufficient for the 400 mW dissipation rating in the target enclosure.

Part Context

This MOSFET belongs to the category of single FETs and power transistors designed for general-purpose switching. It serves as a discrete semiconductor solution for controlling power flow in electronic systems where small form factors and efficient switching are required.