AMR448N

$0.26

Description：MOSFET N-CH 100V 80A DFN5x6
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:4735c53ec933 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 80A DFN5x6
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 10A, 6.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 6.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2681 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (5.2x5.55)
Package / Case：8-PowerVDFN

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AMR448N

Overview

The AMR448N is an N-Channel MOSFET with a Drain-Source Voltage (VDS) of 100 V and a Gate-Source Voltage (VGS) limit of ±20 V. It features a low on-resistance (rDS(on)) of 5.6 mΩ at VGS = 10 V and 7 mΩ at VGS = 6.5 V. The device supports a continuous drain current (ID) of 80 A at TC=25°C, 24 A at TA=25°C, and 20 A at TA=70°C. Maximum junction-to-case thermal resistance (RθJC) is 1 °C/W, while maximum junction-to-ambient resistance (RθJA) is 65 °C/W. Operating temperatures range from -55 to 150 °C.

Feature Summary

Utilizes low rDS(on) trench technology for efficient conduction.
Provides low thermal impedance for effective heat dissipation.
Supports fast switching speeds for high-frequency applications.

Applications

LED Inverter Circuits
DC/DC Conversion Circuits
Motor drives

Procurement Notes

Verify the specific datasheet revision and package type before procurement. Confirm that the DFN5X6-8L footprint matches your PCB layout requirements. Ensure thermal management solutions align with the specified RθJA and RθJC values for your operating environment. Validate electrical parameters against your circuit design constraints.

Selection Notes

Select this component when a 100-V rating and high current handling capability are required. Consider the low on-resistance for minimizing power loss in conduction-heavy applications. Evaluate the thermal performance characteristics to ensure adequate cooling within the specified temperature limits. Verify compatibility with gate drive voltages for optimal switching performance.

Part Context

This part belongs to the Analog Power Inc. MOSFET family, specifically designed as an N-Channel enhancement mode device. It is manufactured using trench technology to achieve low on-resistance and fast switching capabilities. The component is intended for use in various power electronics applications requiring robust voltage and current handling.

Replacement Considerations

Check for direct substitutes with matching VDS, ID, and rDS(on) specifications. Ensure the replacement package is compatible or requires adapter considerations. Verify thermal resistance ratings to maintain similar performance under load.