AMTP65H150G4PS

$5.62

Description：GAN FET N-CH 650V TO-220
Series：-
Mfr：Analog Power Inc.
Package：Tube

SKU:b8e7216a351b Category: Single FETs, MOSFETs Brand: Analog Power Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：GAN FET N-CH 650V TO-220
Series：-
Mfr：Analog Power Inc.
Package：Tube
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：150mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8 nC @ 6 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：598 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Download product information

AMTP65H150G4PS

Overview

The Analog Power AMTP65H150G4PS is an N-Channel Gallium Nitride (GaN) MOSFET rated for a drain-source voltage of 650 V and a continuous drain current of 13 A at 25°C. It features a low on-state resistance of 150 mΩ at VGS = 10V and supports a maximum junction temperature range from -55°C to 175°C. The device offers a thermal resistance of 62.5 °C/W junction-to-ambient and 0.5 °C/W junction-to-case, with a power dissipation capacity of 300 W.

Feature Summary

Utilizes low on-resistance GaN technology for efficient power switching
Provides fast switching speed capabilities suitable for high-frequency applications
Features low thermal impedance for effective heat management

Applications

White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits

Procurement Notes

Verify the specific datasheet revision and package dimensions against the manufacturer's official documentation before finalizing design integration. Confirm that the operating conditions align with the absolute maximum ratings provided in the technical specifications. Ensure proper thermal management solutions are implemented to maintain junction temperatures within the specified safe operating area limits during operation.

Selection Notes

Select this component for designs requiring high-voltage handling with low conduction losses. The 650 V rating and 13 A continuous current capability make it suitable for robust power conversion stages. Consider the thermal characteristics when designing heatsinking strategies, as the low thermal resistance facilitates efficient heat transfer from the case to the mounting surface.

Part Context

This part belongs to the Analog Power series of wide-bandgap semiconductor devices. It represents a shift towards higher efficiency and density in power electronics by leveraging GaN material properties over traditional silicon-based MOSFETs. The device is designed to meet the demands of modern power supplies that require reduced footprint and improved performance metrics.