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The AO3160 is a 600V N-Channel MOSFET in an SOT23A package. It features a maximum drain-source voltage of 600V and a continuous drain current of 0.04A at 25°C. The static drain-source on-resistance is less than 500Ω at VGS=10V and less than 600Ω at VGS=4.5V. The device has a gate threshold voltage ranging from 1.4V to 3.2V, with a maximum gate-body leakage current of ±100nA. Total gate charge is typically 1nC at VDS=400V and ID=0.01A. Operating junction temperature ranges from -50°C to 150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct pinout and electrical characteristics. Confirm that the component meets RoHS compliance requirements if applicable to your design. Check the datasheet revision date to ensure you are referencing the latest technical specifications and thermal data.
Select this component for low-current, high-voltage switching applications where small form factor is required. The SOT23A package limits thermal dissipation capabilities compared to larger packages. Ensure the gate drive voltage is sufficient to achieve the specified on-resistance values for efficient operation.
This part belongs to Alpha & Omega Semiconductor's lineup of high voltage MOSFETs designed for consumer market applications. It utilizes a specific high voltage process technology optimized for AC-DC converter topologies. The device is intended for general purpose switching rather than high-power industrial loads.
No public confirmed substitute part numbers are available in the provided source material.
The maximum peak diode recovery dv/dt rating is 80 V/ns.
No, applications or uses as critical components in life support devices or systems are not authorized.