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Product Detailed Parameters
- Description：MOSFET N-CH 600V 34MA SOT23
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：34mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：500Ohm @ 16mA, 10V
- Vgs(th) (Max) @ Id：4.1V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs：0.15 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：6 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.39W (Ta)
- Operating Temperature：-50°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23A-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The AO3162 is a 600V N-Channel MOSFET fabricated using an advanced high-voltage process. It features a maximum drain-source voltage (BVDSS) of 600V and a continuous drain current (ID) of 0.034A at VGS=10V. The device guarantees avalanche capability with a maximum junction-to-ambient thermal resistance (RθJA) of 125°C/W in a SOT-23 package. Electrical characteristics include a gate threshold voltage range of 2.8V to 4.1V, a typical forward transconductance of 0.045S, and a body-diode reverse recovery time (trr) of up to 160ns.
Feature Summary
- Fabricated using an advanced high-voltage MOSFET process designed for robustness in AC-DC applications.
- Provides low on-resistance and capacitance values to facilitate adoption in offline power supply designs.
- Features guaranteed avalanche capability for enhanced reliability in switching environments.
Applications
- Offline power supply designs
- AC-DC converter circuits
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the SOT-23 package dimensions align with the target PCB footprint requirements. Ensure that the thermal management strategy accounts for the specified junction-to-ambient thermal resistance under actual operating conditions to maintain safe temperature limits.
Selection Notes
Select this component for applications requiring high-voltage blocking capabilities within a compact surface-mount form factor. Evaluate the low gate charge and capacitance parameters if driving efficiency is critical. Consider the avalanche rating when designing circuits subject to inductive load switching or voltage spikes. Verify compatibility with standard logic-level or higher gate drive voltages based on the threshold voltage specifications.
Part Context
Alpha & Omega Semiconductor manufactures the AO3162 as part of its discrete semiconductor portfolio. This N-Channel MOSFET targets the offline power conversion market, offering a balance of voltage handling and small-package integration. The device utilizes proprietary high-voltage processes to achieve performance metrics suitable for consumer and industrial power adapters.
Replacement Considerations
Consult Alpha & Omega Semiconductor official cross-reference lists for verified substitutes. Ensure any replacement maintains equivalent BVDSS, ID ratings, and package compatibility. Verify that alternative devices meet the same avalanche energy requirements and thermal characteristics for direct integration without circuit modification.
