SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MDD AO3400-5.8A is a 30V N-channel enhancement mode field effect transistor housed in an SOT-23 package. It features a continuous drain current of 5.8A and maximum power dissipation of 1.5W at 25°C ambient temperature. The device exhibits low on-resistance, typically 27mΩ at VGS=4.5V and 29mΩ at VGS=3.3V. Operating junction temperatures range from -50°C to +150°C with a thermal resistance of 100°C/W.
Verify the original part number matches MDD AO3400-5.8A and confirm the specific marking code A09T on the component surface. Ensure compliance with RoHS/RoHS III standards as specified in the documentation. Confirm the package type is SOT-23 and check that the supplier provides the correct tape and reel packaging format.
Select this component for applications requiring high-density cell designs and exceptional on-resistance. It is suitable for portable devices and DC/DC converters where low power dissipation and high current capability are necessary. Consider the operating temperature range and thermal resistance when designing the heat dissipation strategy.
This component belongs to the SMD Plastic-Encapsulate MOSFETs SOT-23 series. It is designed as a replacement or equivalent for the AO3400-5.8A type. The part code SOT233400SA09T indicates the specific configuration and marking used by NextGen Components, Inc. for distribution.
Cross-reference part numbers include AO3400-5.8A. Verify pinout compatibility (Gate, Source, Drain) and ensure electrical parameters such as V(BR)DSS, ID, and RDS(on) meet the design requirements before substitution.
The typical on-resistance is 27mΩ at VGS=4.5V and ID=5.8A.
The maximum power dissipation is 1.5W at Ta=25°C.