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Product Detailed Parameters
- Description：30V 4.1A 65MR@10V,4.2A 350MW 1.3
- Series：UMW
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.4 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：954 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The UMW AO3401A is a P-channel enhancement mode MOSFET housed in an SOT-23 surface-mount package. It features a drain-source voltage rating of -30V and a continuous drain current of -4.2A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 55mΩ at VGS=-10V, 65mΩ at VGS=-4.5V, and 120mΩ at VGS=-2.5V. Key electrical parameters include a gate threshold voltage of -1.3V (max) at ID=-250µA, a total gate charge of 9.4nC, and an input capacitance of 954pF. Maximum power dissipation is rated at 1.4W at 25°C, with a junction temperature range of -55°C to 150°C.
Feature Summary
- Utilizes advanced trench technology to achieve low on-resistance and reduced gate charge for efficient switching performance.
- Designed for operation with gate voltages as low as 2.5V, facilitating compatibility with standard logic-level drivers.
- Optimized for use as a load switch or in pulse-width modulation applications requiring fast response times.
Applications
- Load switching circuits
- Pulse-width modulation (PWM) control
- General-purpose power management
Procurement Notes
Verify the manufacturer designation matches UMW, as this part number is also produced by Alpha and Omega Semiconductor. Confirm the specific ordering suffix corresponds to the required tape and reel packaging configuration. Ensure the component meets the necessary environmental compliance standards for the intended deployment environment before finalizing procurement.
Selection Notes
Select this component when a P-channel MOSFET with a -30V breakdown voltage and high current handling capability is required. Consider the thermal resistance characteristics and power dissipation limits relative to the operating ambient temperature. Evaluate the gate drive voltage requirements against the specified on-resistance thresholds to ensure optimal efficiency in the target circuit design.
Part Context
This component belongs to the family of single N-channel and P-channel MOSFETs designed for general-purpose switching applications. It utilizes trench field-stop technology to minimize conduction losses while maintaining robust avalanche energy ratings. The SOT-23 package provides a compact footprint suitable for space-constrained printed circuit board layouts.
Replacement Considerations
AO3401
FAQ
What is the maximum body-diode reverse recovery time?
The maximum body-diode reverse recovery time is 20.2ns under test conditions of IF=-4A and dI/dt=100A/μs.
How does the on-resistance vary with gate-source voltage?
The on-resistance increases as the gate-source voltage decreases; it is specified as less than 55mΩ at -10V, less than 70mΩ at -4.5V, and less than 120mΩ at -2.5V.
