AO3407A

$0.39

Description：30V 4.1A 52MR@10V,4.1A 1.4W 3V@2
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:da4edb0e5555 Category: Single FETs, MOSFETs Brand: UMW

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Product introduction

Product Detailed Parameters

Description：30V 4.1A 52MR@10V,4.1A 1.4W 3V@2
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：52mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.3 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：700 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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AO3407A

Overview

The UMW AO3407A is a P-Channel Enhancement Mode MOSFET housed in an SOT-23 package. It features a drain-source voltage rating of -30V and a continuous drain current of -4.1A at 25°C. The device exhibits an on-state resistance of 52mΩ at VGS = -10V and 87mΩ at VGS = -4.5V. Key electrical characteristics include a gate threshold voltage range of -1V to -3V, a maximum power dissipation of 1.4W at 25°C, and a junction temperature limit of 150°C.

Feature Summary

P-Channel enhancement mode construction for low-side switching applications
Low on-state resistance optimized for efficient power handling
Capable of operation with standard logic-level gate drive voltages
Integrated body diode for freewheeling current paths

Applications

Power management circuits requiring P-channel switching
Load switch implementations in portable electronics
Battery protection modules within consumer devices
DC/DC converter input stages

Procurement Notes

Verify the specific manufacturer designation when sourcing, as the AO3407A part number is utilized by multiple semiconductor vendors including Alpha & Omega Semiconductor and UMW. Confirm that the datasheet parameters match the required electrical specifications for the target application before procurement. Ensure the component meets RoHS compliance standards if required by the end product regulations.

Selection Notes

Select this component based on the required voltage and current ratings relative to the system load. Evaluate the thermal performance requirements against the specified power dissipation limits. Consider the gate drive voltage availability to ensure the on-state resistance remains within acceptable limits for efficiency. Verify package compatibility with the PCB footprint design constraints.

Part Context

This component belongs to the family of surface-mount P-Channel MOSFETs designed for general-purpose switching. It utilizes trench technology to achieve low on-resistance within a compact SOT-23 form factor. These devices are commonly employed in battery-powered systems where space efficiency and power loss reduction are critical design priorities.