AO3407A

AO3407A

$0.39
  • Description:MOSFET P-CH 30V 4.3A SOT23-3L
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:da4edb0e5555 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET P-CH 30V 4.3A SOT23-3L
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:48mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:830 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1.4W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:3-SMD, SOT-23-3 Variant

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AO3407A

Overview

The AO3407A is a P-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -4.3A at VGS=-10V. The device utilizes advanced trench technology to achieve an on-state resistance (RDS(ON)) of less than 48mΩ at VGS=-10V and less than 78mΩ at VGS=-4.5V. It operates within a junction and storage temperature range of -55°C to 150°C, with a maximum power dissipation of 1.4W at 25°C ambient temperature.

Feature Summary

  • Advanced trench technology provides excellent on-state resistance and low gate charge for efficient switching performance.
  • Capable of operation as a load switch or in pulse-width modulation (PWM) applications due to fast switching characteristics.

Applications

  • Load switching
  • Pulse-width modulation (PWM) applications

Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with the manufacturer or authorized distributors before procurement. Confirm that the component meets RoHS compliance requirements and check for any recent product change notices (PCN) regarding manufacturing site or material composition updates to ensure compatibility with existing supply chains.

Selection Notes

Select this component for circuits requiring a compact P-Channel MOSFET with a 30V rating. Ensure the driving circuit can provide sufficient gate-source voltage to minimize RDS(ON), particularly if operating near the -4.5V threshold. Evaluate thermal management needs based on the specified junction-to-ambient thermal resistance and expected duty cycles.

Part Context

This part belongs to the AO34 series of small-signal MOSFETs produced by Alpha & Omega Semiconductor. It is housed in a SOT-23 surface-mount package, designed for space-constrained PCB layouts. The device is intended for general-purpose switching applications where low on-resistance and fast switching speeds are required.

Replacement Considerations

Check for direct pin-compatible alternatives from other manufacturers offering similar VDS and ID ratings. Verify that substitute components match the RDS(ON) specifications at the intended drive voltages (-10V and -4.5V) and confirm equivalent thermal characteristics for reliable operation.

FAQ

What is the maximum gate-source voltage allowed for the AO3407A?

The absolute maximum rating for the gate-source voltage (VGS) is ±20V.

How does the on-state resistance vary with gate voltage?

The RDS(ON) is less than 48mΩ at VGS=-10V and increases to less than 78mΩ at VGS=-4.5V.

AO3407AAO3407A
$0.39
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