AO3407L

Description：MOSFET P-CH 30V 4.1A SOT23-3
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:d2f90681d6c2 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 4.1A SOT23-3
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：52mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：840 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：3-SMD, SOT-23-3 Variant

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AO3407L

Overview

The AO3407L is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance. The device operates with a drain-source voltage of -30V and supports a continuous drain current of -4.1A at VGS=-10V. The maximum on-state resistance is less than 52mΩ at VGS=-10V and less than 87mΩ at VGS=-4.5V. It is housed in a SOT-23 package.

Feature Summary

Advanced trench technology for low gate charge and excellent RDS(ON)
Suitable for load switch applications
Suitable for PWM applications

Applications

Load switch circuits
Pulse Width Modulation (PWM) applications

Procurement Notes

Verify the specific ordering suffix 'L' against official manufacturer documentation to confirm environmental compliance status, such as RoHS or lead-free specifications. Ensure that the electrical characteristics align with the standard AO3407 datasheet parameters before procurement.

Selection Notes

Select this component for designs requiring a compact P-channel MOSFET with low switching losses. Consider the thermal resistance and power dissipation limits when designing heat management solutions. Verify compatibility with the intended gate drive voltage levels for optimal performance.

Part Context

This part belongs to the AO34 series of N-Channel and P-Channel Enhancement Mode Field Effect Transistors produced by Alpha & Omega Semiconductor. These devices are designed for general-purpose switching applications utilizing trench FET technology.