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Product Detailed Parameters
- Description：MOSFET P-CH 30V 2.6A SOT23-3L
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：130mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：370 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：3-SMD, SOT-23-3 Variant
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Overview
The AO3409 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance characteristics. The device is rated for a drain-source voltage of -30V and supports a continuous drain current of -2.6A at a gate-source voltage of -10V. Key electrical parameters include an on-resistance of less than 130mΩ at VGS = -10V and less than 200mΩ at VGS = -4.5V. It is housed in a SOT-23 package.
Feature Summary
- Advanced trench technology provides excellent RDS(ON) performance and low gate charge.
- Designed for efficient switching applications with enhanced thermal stability.
Applications
- Load switch circuits
- Pulse Width Modulation (PWM) applications
Procurement Notes
Verify the specific ordering suffix when purchasing, as options such as 'L' denote green product variants that are electrically identical to standard versions. Confirm RoHS compliance status based on the exact part number ordered. Ensure the component meets Sony 259 specifications if required by your manufacturing standards. Cross-reference datasheets from authorized distributors to confirm current production status and availability.
Selection Notes
Select this component for designs requiring a compact P-channel MOSFET with moderate current handling capabilities. The low gate charge makes it suitable for high-frequency switching environments where drive efficiency is critical. Evaluate the on-resistance requirements against the available gate drive voltages to ensure optimal conduction losses. Consider the SOT-23 package constraints for thermal management in dense PCB layouts.
Part Context
This device belongs to the family of P-Channel Enhancement Mode Field Effect Transistors produced by Alpha & Omega Semiconductor. It shares architectural similarities with other trench-based MOSFETs in the portfolio, focusing on miniaturization and switching efficiency. The AO3409 serves as a discrete solution for power management tasks within consumer electronics and portable devices.
Replacement Considerations
AO3409L is an electrically identical alternative offering a green product ordering option. Standard AO3409 units meet RoHS and Sony 259 specifications. Verify pinout compatibility and thermal characteristics before substituting with components from other manufacturers.
