AO3415A

$0.39

Description：20V 4A [email protected],4A 350MW 1V@250
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8a9ac51d7dab Category: Single FETs, MOSFETs Brand: UMW

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Product introduction

Product Detailed Parameters

Description：20V 4A [email protected],4A 350MW 1V@250
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：36mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1450 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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AO3415A

Overview

The UMW AO3415A is a P-channel enhancement mode MOSFET housed in a SOT-23 plastic-encapsulated package. It features a drain-source voltage rating of -20V and a continuous drain current capacity of -4A. The device exhibits low on-state resistance, specified as a maximum of 36mΩ at VGS=-4.5V and ID=-4A, or 60mΩ at VGS=-2.5V and ID=-4A. Key dynamic parameters include a total gate charge of 17.2nC and an input capacitance of 1450pF. The component supports an operating junction temperature up to 150°C and is designed for efficient switching applications.

Feature Summary

Low on-state resistance for improved power efficiency
Low gate charge facilitating fast switching speeds
Compatible with low gate drive voltages

Applications

Load switch circuits
Pulse width modulation (PWM) applications

Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested quantity aligns with the standard tape and reel base quantity defined by the supplier. Ensure all technical specifications meet the design requirements before finalizing the procurement order.

Selection Notes

Select this component when a compact P-channel solution is required for low-voltage switching tasks. The SOT-23 package suits space-constrained designs. Evaluate the thermal resistance and power dissipation limits relative to the expected load current to ensure reliable operation within the specified temperature range.

Part Context

This part belongs to the series of plastic-encapsulated MOSFETs manufactured by UMW. It serves as a discrete semiconductor switch designed for general-purpose electronic circuits requiring small form factors and efficient power management capabilities.

Replacement Considerations

Check pinout compatibility and electrical ratings such as breakdown voltage and current capacity when identifying substitutes. Verify that alternative components match the SOT-23 package dimensions to fit existing footprints without board modifications.