SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AO3419 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge, supporting operation with gate voltages as low as 2.5V. Key electrical parameters include a drain-source voltage (VDS) of -20V and a continuous drain current (ID) of -3.5A. The device offers an RDS(ON) of less than 75mΩ at VGS = -10V, less than 95mΩ at VGS = -4.5V, and less than 145mΩ at VGS = -2.5V. It features ESD protection rated at 2000V HBM.
Verify the specific datasheet version and package type when sourcing. Confirm that the component meets RoHS requirements if the 'L' suffix variant is required for lead-free compliance. Ensure the selected supplier provides authentic parts from Alpha & Omega Semiconductor to guarantee performance specifications are met.
Select this component for circuits requiring a compact P-channel MOSFET with low drive voltage capability. The -20V rating and -3.5A current capacity define its operational limits. Consider the low gate charge characteristics for efficiency in high-frequency switching environments where rapid transitions are necessary.
This part belongs to the Alpha & Omega Semiconductor P-Channel MOSFET family. It is designed for general-purpose switching applications. The device is available in a lead-free package option designated as AO3419L. It serves as a direct replacement for similar -20V P-Channel devices in space-constrained designs.
Check pinout compatibility and thermal resistance values when substituting. Verify that alternative components support the same 2.5V minimum gate drive requirement. Ensure the substitute device maintains equivalent ESD protection levels.