AO3419L

AO3419L

  • Description:MOSFET P-CH 20V 3.5A SOT23-3
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:97f94007e377 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET P-CH 20V 3.5A SOT23-3
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
  • Rds On (Max) @ Id, Vgs:75mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id:1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:6.6 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1.4W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:3-SMD, SOT-23-3 Variant

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AO3419L

Overview

The AO3419L is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver excellent RDS(ON) with low gate charge, supporting operation with gate voltages as low as 2.5V. Key electrical parameters include a Drain-Source Voltage (VDS) of -20V and a continuous Drain Current (ID) of -3.5A. The device offers an RDS(ON) of less than 75mΩ at VGS = -10V, less than 95mΩ at VGS = -4.5V, and less than 145mΩ at VGS = -2.5V. It features an ESD rating of 2000V HBM and is available in a lead-free package compliant with RoHS standards.

Feature Summary

  • Advanced trench technology for low on-resistance and gate charge
  • Low voltage gate drive capability down to 2.5V
  • High electrostatic discharge protection rated at 2000V HBM
  • Lead-free packaging compliant with environmental specifications

Applications

  • Load switching applications
  • Pulse Width Modulation (PWM) control circuits
  • General purpose power management

Procurement Notes

Verify the specific ordering suffix 'L' confirms the Green Product lead-free status. Confirm the package type matches design requirements. Ensure the selected component meets RoHS and Sony 259 specifications if required by the end product. Cross-reference the datasheet revision date to ensure parameter accuracy.

Selection Notes

Select this component for applications requiring low-side or high-side switching with limited gate drive voltage. The low RDS(ON) at 2.5V makes it suitable for battery-powered systems. Verify thermal dissipation capabilities against the expected current load. Consider the SOT-23 footprint constraints during PCB layout.

Part Context

The AO3419L belongs to the AO34xx series of P-Channel MOSFETs from Alpha & Omega Semiconductor. This series is designed for portable electronics and battery-operated devices where space and efficiency are critical. The 'L' suffix typically denotes a lead-free, environmentally friendly variant within the standard AO3419 product line.

Replacement Considerations

Direct substitutes include AO3413 and AO7413 from the same manufacturer. Other compatible parts may include TSM2313, TSM9434, TSM2301, and TSM3441 from Taiwan Semiconductor. Verify pinout compatibility and electrical ratings before substitution.

FAQ

What is the minimum gate voltage required for full conduction?

The device supports operation with gate voltages as low as 2.5V, though lower resistance is achieved at higher negative gate voltages like -4.5V or -10V.

Is the AO3419L RoHS compliant?

Yes, the AO3419L is a Green Product offered in a lead-free package that meets RoHS and Sony 259 specifications.

What is the ESD protection level of this MOSFET?

The AO3419L is ESD protected with a Human Body Model (HBM) rating of 2000V.

AO3419LAO3419L

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