AO3420

AO3420

$0.48
  • Description:MOSFET N-CH 20V 6A SOT23-3L
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:230935237f57 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 20V 6A SOT23-3L
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 10V
  • Rds On (Max) @ Id, Vgs:24mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:8.8 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:630 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1.4W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:3-SMD, SOT-23-3 Variant

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AO3420

Overview

The AO3420 is a 20V N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V while maintaining a maximum gate-source voltage rating of ±12V. The device is housed in a SOT-23 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of 20V, a continuous drain current (ID) of 6A at VGS=10V, and a maximum junction temperature range of -55°C to 150°C.

Feature Summary

  • Advanced trench technology provides excellent on-resistance and low gate charge for efficient switching performance.
  • Capable of operation with gate voltages as low as 1.8V, facilitating compatibility with low-voltage logic systems.
  • Suitable for use as a uni-directional or bi-directional load switch in power management applications.

Applications

  • Uni-directional load switching
  • Bi-directional load switching
  • Low-voltage logic level control circuits

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the intended operating conditions remain within the absolute maximum ratings provided in the technical data sheet. Ensure compliance with applicable export control regulations and legal requirements during the sourcing process.

Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance at very low gate drive voltages is required. The SOT-23 package limits thermal dissipation capabilities compared to larger packages, so verify thermal management requirements based on the application's duty cycle and ambient temperature constraints.

Part Context

This part belongs to the Alpha & Omega Semiconductor portfolio of power MOSFETs designed for portable and battery-powered electronics. The company specializes in trench technology devices that optimize the trade-off between conduction losses and switching speeds for modern power management integrated circuits.

Replacement Considerations

Consult official cross-reference lists from Alpha & Omega Semiconductor for verified equivalent parts. Ensure any substitute maintains identical pinout configuration, voltage ratings, and package dimensions to guarantee mechanical and electrical compatibility without circuit redesign.

FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (VGS) rating is ±12V.

Can this device operate with a 1.8V gate drive?

Yes, the device supports operation with gate voltages as low as 1.8V, though the on-resistance will be higher than at 10V.

AO3420AO3420
$0.48
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