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Product Detailed Parameters
- Description：SOT-23 POWER MOSFETS ROHS
- Series：UMW
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：120mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.2 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：325 pF @ 4.5 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3L
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The UMW AO3423A is a P-Channel MOSFET in a SOT-23-3L package. It features a -20V drain-source voltage and -12V gate-source voltage rating. The device supports a continuous drain current of -2A and a pulsed current of -18A. Maximum on-resistance is 120mΩ at VGS=-4.5V and 150mΩ at VGS=-2.5V. Power dissipation is 1.4W with a junction temperature range up to 150°C.
Feature Summary
- Utilizes TrenchFET technology for enhanced power performance.
- Includes electrostatic discharge protection rated at 2.0KV.
Applications
- Load switch for portable devices
- DC/DC converter
Procurement Notes
Verify the specific manufacturer designation, as this component is widely produced by multiple vendors including Alpha & Omega Semiconductors. Confirm that the datasheet provided matches the exact electrical characteristics required for your circuit design, particularly regarding the on-resistance values at different gate voltages. Ensure the SOT-23-3L package dimensions are compatible with your PCB layout constraints before finalizing procurement.
Selection Notes
Select this component for low-voltage applications requiring a compact surface-mount solution. The -20V rating suits battery-powered systems. Consider the thermal resistance of 125°C/W when designing heat dissipation strategies. The low gate charge of 3.2nC makes it suitable for high-frequency switching applications where efficiency is critical.
Part Context
This part belongs to the category of Plastic-Encapsulate MOSFETS. It is specifically designed as a P-Channel device. The SOT-23-3L package provides a small form factor suitable for space-constrained electronic designs. It serves as a fundamental switching element in modern power management circuits.
Replacement Considerations
The AO3423A is electrically identical to the AO3423L from other manufacturers. Verify pinout compatibility when substituting with parts from different suppliers to ensure correct Gate, Source, and Drain connections.
