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Product Detailed Parameters
- Description：MOSFET P-CH 30V 4A SOT23-3
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：645 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：3-SMD, SOT-23-3 Variant
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Overview
The AO3451 is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and fast switching speeds. The device is designed for surface-mount applications, offering high performance in a compact SOT-23 package. Key electrical characteristics include a drain-source voltage of -30V and a continuous drain current of -5.8A at 25°C. The component operates within a junction temperature range of -55°C to 150°C and complies with RoHS standards.
Feature Summary
- Advanced trench technology for optimized on-resistance
- Fast switching capabilities suitable for high-frequency applications
- RoHS compliant construction without halogenated materials
Applications
- Load switching circuits
- Power management modules
- General purpose switching applications
Procurement Notes
Verify the specific ordering suffix to ensure compliance with environmental regulations such as RoHS or REACH requirements. Confirm that the package type matches the intended PCB footprint design. Check for any recent product change notices regarding manufacturing site transfers or material updates. Ensure storage conditions adhere to moisture sensitivity level guidelines before soldering.
Selection Notes
Select this component when a compact N-channel MOSFET is required for low-voltage switching tasks. Consider the thermal dissipation capabilities relative to the expected load current and ambient temperature. Evaluate the gate charge parameters against the driving circuit's capability to ensure efficient switching transitions. Compare the on-resistance values with alternative packages if higher current handling is necessary.
Part Context
This part belongs to the standard discrete MOSFET portfolio from Alpha & Omega Semiconductor. It is commonly used in consumer electronics and industrial control systems where space constraints are critical. The SOT-23 package provides a balance between electrical performance and physical size, making it suitable for dense board layouts.
Replacement Considerations
Direct substitutes may include other -30V N-channel MOSFETs in SOT-23 packages from different manufacturers. Verify pinout compatibility and thermal resistance values before substitution. Ensure that the replacement device meets or exceeds the original specifications for voltage, current, and on-resistance.
