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The AO4264E is a 60V N-Channel AlphaSGT™ trench MOSFET in an SOIC-8 package. It features a maximum continuous drain current of 13.5A at VGS=10V and low on-resistance below 9.8mΩ at VGS=10V, or 13.5mΩ at VGS=4.5V. The device includes typical HBM Class 2 ESD protection and has been subjected to 100% UIS and Rg testing. Thermal characteristics include a junction-to-ambient resistance of 75°C/W in still air.
Verify the specific ordering suffix against official manufacturer documentation to confirm the exact tape and reel configuration. Ensure that the component meets all applicable export control regulations and legal requirements before procurement. Evaluate product suitability for intended applications independently.
Select this component based on its 60V breakdown voltage and 13.5A continuous current capability. Consider the thermal resistance values when designing heat dissipation strategies. Verify compatibility with required gate drive voltages for optimal on-resistance performance.
This part belongs to the AlphaSGT™ family of power MOSFETs manufactured by Alpha & Omega Semiconductor. These devices are designed for general-purpose power management applications requiring high efficiency and reliable switching performance in compact surface-mount packages.
Consult official manufacturer cross-reference lists for verified substitutes. Do not assume functional equivalence based solely on pinout or voltage ratings without verifying electrical parameters.
Yes, the datasheet confirms that every unit undergoes 100% UIS testing.
The absolute maximum rating for gate-source voltage is ±20V.