AO4292E

$0.88

Description：MOSFET N-CH 100V 8A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0470d9b27a1c Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 8A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AO4292E

Overview

The AO4292E is a 100V N-Channel MOSFET utilizing Trench Power MV technology. It features low on-resistance and optimized fast-switching performance. Key electrical parameters include a drain-source voltage of 100V, continuous drain current of 8A at VGS=10V, and maximum junction temperature of 150°C. On-resistance is less than 23mΩ at VGS=10V and 33mΩ at VGS=4.5V. The device offers typical ESD protection (HBM Class 2) and is 100% UIS tested.

Feature Summary

Utilizes advanced Trench Power MV MOSFET technology for enhanced performance.
Optimized specifically for fast-switching applications with low gate charge.
Features low static drain-source on-resistance across various gate voltages.
Includes built-in electrostatic discharge protection mechanisms.

Applications

Synchronous rectification in DC/DC converters
Synchronous rectification in AC/DC converters
Industrial motor drive systems

Procurement Notes

Verify the specific package type and tape & reel quantity against the manufacturer's ordering information before purchase. Confirm RoHS compliance status and ensure the component meets all environmental standards required for the intended deployment environment. Cross-reference datasheet revision dates to ensure accurate parameter alignment.

Selection Notes

Select this component for designs requiring high efficiency in power conversion stages. Evaluate thermal management requirements based on the specified junction-to-ambient resistance values. Ensure gate drive voltages align with the threshold characteristics to maintain optimal on-state performance during operation.

Part Context

This part belongs to the Alpha & Omega Semiconductor lineup of power management solutions. It is designed as a general-purpose N-Channel MOSFET suitable for replacing older generation devices in compact power supply architectures where space and efficiency are critical constraints.

Replacement Considerations

Review pinout compatibility and thermal resistance specifications when substituting similar N-Channel MOSFETs from other manufacturers. Verify that alternative components meet or exceed the 100V breakdown voltage and 8A continuous current ratings.