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Product Detailed Parameters
- Description：MOSFET N-CH 20V 20A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：5.9mOhm @ 20A, 4.5V
- Vgs(th) (Max) @ Id：1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：3300 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AO4402G is a 20V N-Channel MOSFET utilizing Trench Power MOSFET technology. It features low on-resistance and supports gate voltages as low as 2.5V. The device is rated for a continuous drain current of 20A at VGS=4.5V, with RDS(ON) less than 5.9mΩ at that voltage and less than 7.3mΩ at VGS=2.5V. It operates within a junction temperature range of -55°C to 150°C and is available in an SO-8 package.
Feature Summary
- Utilizes advanced Trench Power MOSFET technology for optimized performance
- Designed for low gate charge and efficient operation at reduced gate voltages
- Verified against Unclamped Inductive Switching (UIS) stress conditions
Applications
- DC/DC converters in computing systems
- Server power supply modules
- Point-of-load (POL) regulation circuits
- Battery protection switching applications
Procurement Notes
Verify the specific ordering suffix matches the required tape and reel quantity. Confirm RoHS compliance status aligns with project environmental requirements. Ensure the selected component version corresponds to the latest datasheet revision to guarantee accurate electrical parameters and thermal characteristics during integration.
Selection Notes
Select this component when a 20V rating is sufficient and low on-resistance is critical for efficiency. The device is suitable for applications requiring reliable switching at low gate drive voltages. Evaluate thermal management needs based on the specified junction-to-ambient resistance values under your specific board layout conditions.
Part Context
This part belongs to Alpha & Omega Semiconductor's portfolio of N-Channel enhancement mode field effect transistors. It is designed for surface-mount assembly in compact electronic designs. The SO-8 package provides a balance between current handling capability and footprint size for modern circuit boards.
Replacement Considerations
Direct substitutes require matching the 20V drain-source voltage, N-channel configuration, and SO-8 package. Verify that alternative components meet or exceed the 20A continuous drain current and low RDS(ON) specifications to maintain circuit performance integrity.
