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The AO4405 is a P-Channel MOSFET manufactured by UMW, utilizing advanced trench technology to achieve low on-resistance and gate charge. It features a drain-source voltage of -30 V and a continuous drain current of -6 A at 25°C. The maximum on-state resistance is 45 mΩ at VGS = -10 V and ID = -6 A. Total gate charge is 11 nC at VGS = -10 V. The device operates within a junction temperature range of -55°C to 150°C and is housed in an SOP-8 package.
Verify the manufacturer designation as UMW or UTD Semiconductor Co., Limited when sourcing. Confirm the package type is SOP-8 with a standard base quantity of 3,000 units per tape and reel. Ensure compliance with RoHS3 standards and check for specific ordering codes if alternative packaging formats are required.
Select this component for designs requiring a -30 V P-Channel MOSFET with a maximum continuous current of -6 A. Consider the thermal resistance values (RθJA of 75°C/W) for heat dissipation requirements. Verify that the gate drive voltage supports the specified RDS(ON) thresholds for efficient switching in the target application.
This part belongs to the UMW P-Channel MOSFET family. It is designed for general-purpose switching applications where low on-resistance and fast switching speeds are critical. The device is suitable for integration into portable electronics and power management systems requiring compact surface-mount solutions.
No public confirmed substitute part numbers are available in the provided documentation.