AO4405

AO4405

$0.71
  • Description:SOP-8 MOSFETS ROHS
  • Series:UMW
  • Mfr:UMW
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:7c0d120f0e60 Category: Brand:

  
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Product Detailed Parameters

  • Description:SOP-8 MOSFETS ROHS
  • Series:UMW
  • Mfr:UMW
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:45mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:520 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SOP
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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AO4405

Overview

The AO4405 is a P-Channel MOSFET manufactured by UMW, utilizing advanced trench technology to achieve low on-resistance and gate charge. It features a drain-source voltage of -30 V and a continuous drain current of -6 A at 25°C. The maximum on-state resistance is 45 mΩ at VGS = -10 V and ID = -6 A. Total gate charge is 11 nC at VGS = -10 V. The device operates within a junction temperature range of -55°C to 150°C and is housed in an SOP-8 package.

Feature Summary

  • Advanced trench technology for optimized on-resistance and switching performance
  • Suitable for load switch and PWM applications
  • Low gate charge characteristics

Applications

  • Battery protection circuits
  • Load switches
  • Uninterruptible power supplies

Procurement Notes

Verify the manufacturer designation as UMW or UTD Semiconductor Co., Limited when sourcing. Confirm the package type is SOP-8 with a standard base quantity of 3,000 units per tape and reel. Ensure compliance with RoHS3 standards and check for specific ordering codes if alternative packaging formats are required.

Selection Notes

Select this component for designs requiring a -30 V P-Channel MOSFET with a maximum continuous current of -6 A. Consider the thermal resistance values (RθJA of 75°C/W) for heat dissipation requirements. Verify that the gate drive voltage supports the specified RDS(ON) thresholds for efficient switching in the target application.

Part Context

This part belongs to the UMW P-Channel MOSFET family. It is designed for general-purpose switching applications where low on-resistance and fast switching speeds are critical. The device is suitable for integration into portable electronics and power management systems requiring compact surface-mount solutions.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

AO4405AO4405
$0.71
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