AO4406A

$0.76

Description：MOSFET N-CH 30V 13A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d89822d1341c Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 13A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：910 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AO4406A

Overview

The AO4406A is an N-channel MOSFET manufactured by Alpha & Omega Semiconductor, housed in a surface-mount SOIC-8 package. It features a drain-source voltage rating of 30 V and supports a continuous drain current of 13 A. The device utilizes advanced trench technology to achieve low gate charge and excellent on-resistance characteristics. Key electrical parameters include a maximum power dissipation of 3.1 W at ambient temperature, an input capacitance of 910 pF at 15 V, and a threshold voltage of 2.5 V. Operating junction temperatures range from -55 °C to 150 °C.

Feature Summary

Advanced trench technology for low gate charge and superior on-resistance
Suitable for high-side switching applications in switch-mode power supplies
Designed for general-purpose applications requiring efficient power control

Applications

High-side switching in switch-mode power supplies (SMPS)
General-purpose power management circuits
Low-voltage load switching applications

Procurement Notes

Verify the specific datasheet version and manufacturer documentation to confirm exact electrical limits and thermal characteristics. Ensure that the SOIC-8 package dimensions and pinout align with the target PCB footprint design. Cross-reference RoHS compliance status and lead-free certification requirements against current regulatory standards before finalizing component selection for production.

Selection Notes

Select this component when designing circuits requiring a 30 V N-channel MOSFET with high current handling capabilities up to 13 A. Consider the low gate charge and fast switching times for efficiency in high-frequency power conversion topologies. Evaluate thermal management strategies given the 3.1 W power dissipation limit in the SOIC-8 package to ensure reliable operation within the specified temperature range.

Part Context

This part belongs to the Alpha & Omega Semiconductor lineup of trench MOSFETs, engineered for compact surface-mount implementations. The SOIC-8 form factor allows for space-constrained designs while maintaining robust electrical performance. It serves as a standard solution for low-voltage, high-current switching tasks in consumer electronics and industrial power systems.