SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AO4407AL is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver excellent on-resistance and ultra-low gate charge, rated for a 25V gate threshold. The device features a drain-source voltage of -30V and a continuous drain current of -12A at ambient temperature. On-resistance is specified as less than 11mΩ at VGS=-20V and less than 13mΩ at VGS=-10V. It operates within a junction temperature range of -55°C to 150°C and is housed in an 8-SOIC surface-mount package.
Verify the specific suffix 'AL' against the manufacturer's official datasheet to confirm if it denotes a distinct variant from the standard AO4407A. Check component status, as some listings indicate the base model may be obsolete. Ensure RoHS compliance documentation aligns with project requirements before finalizing procurement.
Select this component for low-voltage DC-DC converters or battery protection circuits requiring efficient P-channel switching. Consider the 8-SOIC package constraints for thermal management. Verify that the required gate drive voltage supports the specified RDS(ON) thresholds for optimal efficiency in the target application.
This part belongs to the AO44 series of P-Channel MOSFETs from Alpha & Omega Semiconductor. These devices are designed for general-purpose switching applications where low on-resistance and fast switching speeds are critical. The family typically offers various voltage and current ratings packaged in compact surface-mount formats suitable for portable electronics.
Public confirmed substitute part numbers: None identified in source data.