AO4407L

Description：MOSFET P-CH 30V 12A 8SO
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Bulk

SKU:913ff25d3242 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 12A 8SO
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 20V
Rds On (Max) @ Id, Vgs：14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AO4407L

Overview

The AO4407L is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and ultra-low gate charge, with a maximum gate-source voltage rating of 25V. The device is rated for a drain-source voltage of -30V and a continuous drain current of -12A at VGS = -20V. Key electrical parameters include an on-resistance of less than 13mΩ at VGS = -20V and less than 14mΩ at VGS = -10V. It operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Advanced trench technology provides excellent on-resistance and ultra-low gate charge characteristics.
Suitable for use as a load switch or in pulse-width modulation (PWM) applications.
Electrically identical to the standard AO4407 model.

Applications

Load switching
Pulse-width modulation (PWM) applications

Procurement Notes

Verify that the specific component ordered matches the AO4407L designation. Confirm RoHS compliance and Halogen-free status, as these are distinct attributes associated with this suffix. Ensure the supplier documentation explicitly states the electrical identity with the AO4407 variant if cross-referencing datasheets.

Selection Notes

Select this component for designs requiring a P-channel MOSFET with a 30V drain-source voltage rating. Consider the thermal resistance values when designing heat dissipation strategies. Verify that the gate drive voltage meets the requirements for the desired on-resistance level, specifically checking performance at -5V, -10V, or -20V gate-source voltages.

Part Context

This part belongs to the AO4407 family from Alpha & Omega Semiconductor. The 'L' suffix denotes a Halogen-free version of the standard AO4407. Both variants share identical electrical specifications and are designed for consumer market applications using SOIC-8 surface-mount packaging.

Replacement Considerations

The AO4407 is electrically identical to the AO4407L. Substitution is possible provided the replacement part meets the same electrical ratings and package dimensions.