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Product Detailed Parameters
- Description：SOP-8 MOSFETS ROHS
- Series：UMW
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：85 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：10500 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOP
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The UMW AO4410 is an N-Channel MOSFET featuring a 30V drain-source voltage rating and an 18A continuous drain current at VGS=10V. It utilizes advanced trench technology to achieve low on-resistance, specified as less than 5.5mΩ at VGS=10V and less than 6.2mΩ at VGS=4.5V. The device includes 100% UIS and Rg testing for reliability. It operates within a junction temperature range of -55°C to 150°C and is housed in an SOP-8 package.
Feature Summary
- Advanced trench technology providing excellent on-resistance and shoot-through immunity
- Optimized body diode characteristics with low forward voltage
- Ultra-low gate resistance for efficient switching performance
Applications
- Low side switch in notebook CPU core power conversion
- General purpose power switching applications
- DC-DC converter circuits
Procurement Notes
Verify the specific manufacturer marking and datasheet revision when sourcing, as multiple vendors produce this part number. Confirm the package type is SOP-8 and check for RoHS compliance status. Ensure the ordering suffix matches the required tape and reel quantity of 3000 units. Cross-reference electrical limits with the official UTD Semiconductor datasheet to guarantee compatibility with your circuit design requirements.
Selection Notes
Select this component for applications requiring low conduction losses at 30V. The high current capability supports demanding power stages. Evaluate thermal management needs based on the specified thermal resistance values. Consider the gate charge parameters for driving circuit compatibility. Verify that the operating voltage and current levels remain within the absolute maximum ratings defined in the specification sheet.
Part Context
This component belongs to the category of N-Channel Enhancement Mode Field Effect Transistors. It is designed for surface mount assembly using the SOP-8 footprint. The device is manufactured by UTD Semiconductor Co., Limited under the UMW brand. It serves as a standard solution for medium-power switching tasks in consumer electronics and computing hardware.
Replacement Considerations
Compatible alternatives include AO4490 and AO4498 from Alpha & Omega Semiconductors. Other potential substitutes are TSM4392, TSM4404, and TSM4872 from Taiwan Semiconductor. CMT4392 may also serve as a functional equivalent depending on specific pinout and parameter alignment.
