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The AO4413L is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver excellent on-resistance and ultra-low gate charge with a 25V gate rating. The device features a Drain-Source Voltage of -30V, a Continuous Drain Current of -15A at VGS=-20V, and an On-State Drain-Source Resistance of less than 7mΩ at VGS=-20V. It is RoHS and Halogen-Free compliant.
Verify the specific ordering suffix 'L' against official Alpha & Omega Semiconductor documentation to confirm compliance details such as halogen-free status or specific packaging variations. Ensure the component meets the required consumer market qualification standards defined in the datasheet before finalizing procurement specifications.
Select this component for designs requiring a 30V P-Channel MOSFET with high current handling capabilities up to 15A. Consider the thermal resistance values and safe operating area curves when designing heat dissipation strategies. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.
This part belongs to the Alpha & Omega Semiconductor AO4413 series of P-Channel MOSFETs. It is designed for general-purpose switching applications where low gate charge and efficient power handling are critical. The device is qualified for the consumer market sector.
Direct substitutes include AO4413A and AO4413 from the same manufacturer family. Cross-manufacturer replacements must match the -30V drain-source voltage, -15A continuous current, and SOIC-8 package constraints.
The absolute maximum Gate-Source Voltage (VGS) rating is ±25V.
Yes, the AO4413 is 100% UIS (Unclamped Inductive Switching) tested.