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Product Detailed Parameters
- Description：MOSFET P-CH 30V 9.7A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id：2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：32 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1900 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AO4419 is a P-Channel MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench MOSFET technology to achieve extremely low on-resistance within a low resistance package. The device features a drain-source voltage of -30V and a continuous drain current of -9.7A at VGS = -10V. The on-resistance is specified as less than 20mΩ at VGS = -10V and less than 35mΩ at VGS = -4.5V. It is housed in an SOIC-8 package and has been subjected to 100% UIS and Rg testing.
Feature Summary
- Combines advanced trench MOSFET technology with a low resistance package for high efficiency.
- Provides extremely low RDS(ON) characteristics suitable for power management applications.
- Includes comprehensive reliability verification through 100% UIS and Rg testing.
Applications
- Load switch circuits
- Battery protection systems
Procurement Notes
Verify the specific datasheet version and ordering suffixes directly from Alpha & Omega Semiconductor official documentation. Confirm that the component matches the required electrical specifications, particularly the RDS(ON) thresholds at different gate voltages. Ensure the SOIC-8 package dimensions align with your PCB footprint requirements before finalizing procurement decisions.
Selection Notes
Select this component when designing circuits requiring a P-Channel MOSFET with a -30V rating and high current handling capability up to -9.7A. Consider the low on-resistance values for minimizing conduction losses in load switch or battery protection roles. Verify compatibility with control logic levels, noting the performance differences between -10V and -4.5V gate drive conditions.
Part Context
This component belongs to the Alpha & Omega Semiconductor discrete semiconductor transistor category. It is specifically classified as a P-Channel MOSFET designed for general-purpose switching applications. The manufacturer utilizes trench technology to enhance performance metrics compared to standard planar devices, targeting efficiency improvements in portable and industrial electronics.
Replacement Considerations
Consult official Alpha & Omega Semiconductor substitution guides for verified equivalents. Ensure any replacement maintains the -30V VDS rating, SOIC-8 package form factor, and comparable RDS(ON) specifications to guarantee circuit functionality without modification.
