AO4421L

AO4421L

  • Description:MOSFET P-CH 60V 6.2A 8SO
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Bulk

SKU:a16e0f373f9c Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET P-CH 60V 6.2A 8SO
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Bulk
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:6.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:40mOhm @ 6.2A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SOIC
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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AO4421L

Overview

The AO4421L is a P-Channel MOSFET from Alpha & Omega Semiconductor Inc. featuring a -60V drain-source voltage (VDS) and a continuous drain current (ID) of -6.2A at VGS=-10V. It achieves an on-state resistance (RDS(ON)) of less than 40mΩ at VGS=-10V and less than 50mΩ at VGS=-4.5V. The device utilizes advanced trench technology for low resistance and includes 100% UIS and Rg testing. It operates within a junction temperature range of -55°C to 150°C.

Feature Summary

  • Advanced trench MOSFET technology combined with low resistance packaging for extremely low RDS(ON).
  • Validated for high reliability through 100% Unclamped Inductive Switching (UIS) and gate resistance testing.

Applications

  • Load switch circuits
  • Battery protection systems

Procurement Notes

Verify the specific suffix 'L' against the official datasheet, as the primary document references 'AO4421'. Confirm package type and electrical parameters match the intended design requirements before procurement. Ensure compliance with export control regulations and legal requirements applicable to your region.

Selection Notes

Select this component for applications requiring a P-Channel MOSFET with -60V rating and low on-resistance. Consider the thermal characteristics and SOA curves for power dissipation limits. Verify compatibility with logic levels if driving at VGS=-4.5V.

Part Context

This part belongs to the Alpha & Omega Semiconductor P-Channel MOSFET family. It is designed for general-purpose switching applications where low on-resistance and robust performance are critical. The device is manufactured using trench technology to optimize efficiency and thermal performance.

Replacement Considerations

Check for direct substitutes with matching -60V VDS, similar ID ratings, and compatible RDS(ON) values. Ensure pinout compatibility and thermal characteristics align with the existing design constraints.

FAQ

What is the maximum gate-source voltage for the AO4421?

The absolute maximum gate-source voltage (VGS) is ±20V.

Is the AO4421 tested for inductive switching loads?

Yes, the device undergoes 100% Unclamped Inductive Switching (UIS) testing.

AO4421LAO4421L

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