AO4437

Description：MOSFET P-CH 12V 11A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:20f735bb7502 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 11A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：16mOhm @ 11A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：4750 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AO4437

Overview

The AO4437 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low gate charge and operation with gate voltages as low as 1.8V. The device features a drain-source voltage of -12V and a continuous drain current of -11A at VGS = -4.5V. On-resistance values are less than 16mΩ at VGS = -4.5V, less than 20mΩ at VGS = -2.5V, and less than 25mΩ at VGS = -1.8V. It is housed in an SOIC-8 package.

Feature Summary

Advanced trench technology for excellent on-resistance and low gate charge
Capable of operation with gate voltages as low as 1.8V
Suitable for use as a load switch or in PWM applications
ESD protected with a rating of 4KV HBM

Applications

Load switching
PWM applications

Procurement Notes

Verify the component matches the specified P-Channel enhancement mode type and SOIC-8 package configuration. Confirm that the ordering suffix corresponds to the standard Pb-free product or the AO4437L Green Product option, noting they are electrically identical. Ensure compliance with RoHS and Sony 259 specifications during procurement.

Selection Notes

Select this component for applications requiring low gate drive voltages down to 1.8V. Consider the specific on-resistance requirements based on the available gate voltage levels: 16mΩ at -4.5V, 20mΩ at -2.5V, or 25mΩ at -1.8V. Evaluate thermal management needs against the steady-state junction-to-ambient thermal resistance of 90°C/W.

Part Context

This part belongs to the Alpha & Omega Semiconductor MOSFET family, specifically designed for consumer market applications. It is an enhancement mode field effect transistor utilizing trench technology to optimize performance metrics such as on-resistance and gate charge within a compact surface-mount package.