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Product Detailed Parameters
- Description：MOSFET P-CH 40V 6A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：42mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1175 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AO4443 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench MOSFET technology to achieve extremely low on-resistance and ultra-low gate charge, making it suitable for load switch and battery protection applications. The device is housed in an SOIC-8 package and features a drain-source voltage of -40V. At VGS=-10V, the maximum continuous drain current is -6A with an RDS(ON) below 42mΩ. At VGS=-4.5V, the RDS(ON) remains below 63mΩ. The component has been tested for 100% Unclamped Inductive Switching (UIS) capability.
Feature Summary
- Advanced trench MOSFET technology provides extremely low RDS(ON).
- Ultra-low gate charge characteristics support efficient switching performance.
- Suitable for use as a load switch or in PWM applications.
Applications
- Load switch applications
- Battery protection circuits
- PWM applications
Procurement Notes
Verify that the specific ordering suffix matches the required compliance standards, such as RoHS or Sony 259 specifications. Confirm the package type corresponds to the SOIC-8 footprint required for the target PCB design. Ensure the supplier documentation explicitly states the product lifecycle status as active to guarantee long-term availability for production runs.
Selection Notes
Select this component when a P-Channel MOSFET with a -40V rating and low on-resistance is required for power management tasks. Consider the thermal resistance values provided in the datasheet to ensure adequate heat dissipation within the system constraints. Evaluate the gate charge requirements against the driving circuit capabilities to optimize switching speeds and minimize power loss during operation.
Part Context
This part belongs to the Alpha & Omega Semiconductor discrete semiconductor lineup, specifically designed for consumer market applications. It represents a standard product offering that meets lead-free manufacturing specifications. The device is electrically identical to the AO4443L variant, which serves as a green product ordering option without altering functional parameters.
Replacement Considerations
The AO4443L is electrically identical to the AO4443 and serves as a direct substitute. Verify that any alternative components maintain the same -40V drain-source voltage rating and compatible SOIC-8 pinout configuration to ensure seamless integration into existing designs.
