AO4446

Description：MOSFET N-CH 30V 15A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:95652b884b2e Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 15A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AO4446

Overview

The AO4446 is a 30V N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge, making it suitable for PWM applications. Key electrical parameters include a drain-source voltage (VDS) of 30V, continuous drain current (ID) of 15A at VGS=10V, and maximum junction temperature of 150°C. The device features an on-resistance (RDS(ON)) of less than 8.5mΩ at VGS=10V and 14.5mΩ at VGS=4.5V. It is housed in an SOIC-8 package.

Feature Summary

Advanced trench technology provides excellent RDS(ON), low gate charge, and low gate resistance.
Ideally suited for use in PWM applications due to fast switching characteristics.
100% UIS tested for reliability under avalanche conditions.

Applications

PWM applications

Procurement Notes

Verify the component datasheet revision and manufacturing date code upon receipt. Confirm that the SOIC-8 package markings match the official Alpha & Omega Semiconductor specifications. Ensure storage conditions comply with moisture sensitivity level requirements before soldering. Check for physical damage or lead alignment issues during incoming inspection.

Selection Notes

Select this component when a 30V N-Channel MOSFET with high current capability is required for power switching. Consider the low gate charge and resistance for efficient drive requirements in pulse-width modulation circuits. Evaluate thermal management needs based on the specified junction-to-ambient thermal resistance values for the target application environment.

Part Context

The AO4446 belongs to the family of N-Channel MOSFETs produced by Alpha & Omega Semiconductor. It is designed as a general-purpose power switch utilizing trench FET technology. The device is intended for consumer market applications and is not authorized for use in life support devices or systems without specific manufacturer approval.