AO4478L

AO4478L

  • Description:MOSFET N-CH 100V 8SOIC
  • Series:*
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:64fc433b956b Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 100V 8SOIC
  • Series:*
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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AO4478L

Overview

The AO4478L is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge, making it suitable for general-purpose, PWM, and load switch applications. The device features a 30V drain-source voltage rating and a continuous drain current of 9A at VGS=10V. Key electrical parameters include an on-resistance of less than 19mΩ at VGS=10V and less than 26mΩ at VGS=4.5V. It is housed in an SOIC-8 package.

Feature Summary

  • Advanced trench technology provides excellent on-resistance and low gate charge characteristics.
  • Fully tested for 100% Unclamped Inductive Switching (UIS) capability.
  • RoHS compliant and halogen-free construction.

Applications

  • General purpose switching
  • Pulse Width Modulation (PWM) control
  • Load switch applications

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging or environmental compliance details. Ensure that any assumed functional differences based solely on suffixes are validated through direct datasheet cross-referencing before procurement decisions are finalized.

Selection Notes

Select this component for low-voltage switching designs requiring robust avalanche energy handling. Evaluate thermal performance based on the specific PCB copper area and airflow conditions, as junction-to-ambient resistance varies significantly with board layout. Confirm gate drive voltage compatibility with the specified on-resistance thresholds.

Part Context

This part belongs to the Alpha & Omega Semiconductor MOSFET portfolio, designed for consumer market applications. It represents a standard enhancement mode field effect transistor optimized for cost-effective power management solutions where moderate current handling and high reliability under inductive loads are required.

Replacement Considerations

No publicly confirmed substitute part numbers are available in the provided source material.

FAQ

Is the AO4478L qualified for unclamped inductive switching?

Yes, the datasheet confirms that the device has been 100% UIS tested.

What is the maximum drain-source voltage rating?

The maximum Drain-Source Voltage (BVDSS) is rated at 30V.

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