SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AO4478L is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge, making it suitable for general-purpose, PWM, and load switch applications. The device features a 30V drain-source voltage rating and a continuous drain current of 9A at VGS=10V. Key electrical parameters include an on-resistance of less than 19mΩ at VGS=10V and less than 26mΩ at VGS=4.5V. It is housed in an SOIC-8 package.
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging or environmental compliance details. Ensure that any assumed functional differences based solely on suffixes are validated through direct datasheet cross-referencing before procurement decisions are finalized.
Select this component for low-voltage switching designs requiring robust avalanche energy handling. Evaluate thermal performance based on the specific PCB copper area and airflow conditions, as junction-to-ambient resistance varies significantly with board layout. Confirm gate drive voltage compatibility with the specified on-resistance thresholds.
This part belongs to the Alpha & Omega Semiconductor MOSFET portfolio, designed for consumer market applications. It represents a standard enhancement mode field effect transistor optimized for cost-effective power management solutions where moderate current handling and high reliability under inductive loads are required.
No publicly confirmed substitute part numbers are available in the provided source material.
Yes, the datasheet confirms that the device has been 100% UIS tested.
The maximum Drain-Source Voltage (BVDSS) is rated at 30V.