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The UMW AO4480 is an N-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It features a Drain-Source Voltage (VDS) of 40V and a Continuous Drain Current (ID) of 14A at TA=25°C. The device offers low on-resistance, specified as less than 12mΩ at VGS=10V and less than 16mΩ at VGS=4.5V. It includes ESD protection rated at ±20V Gate-Source Voltage and supports a maximum junction temperature of 150°C.
Verify the specific package variant and ordering code against the manufacturer's current documentation to ensure compatibility with design requirements. Confirm that the component meets all necessary environmental and safety standards required for the intended application before finalizing procurement decisions.
Select this component based on its 40V voltage rating and 14A continuous current capability. Consider the thermal resistance characteristics and the requirement for low gate charge if high-frequency switching performance is critical for the target circuit design.
The AO4480 belongs to the category of N-Channel MOSFETs manufactured by UMW (UTD Semiconductor Co., Limited). It is designed for power management applications requiring efficient switching capabilities within a compact SOP-8 package format.
Cross-reference with other 40V N-Channel MOSFETs offering similar RDS(ON) and ID ratings. Ensure pinout compatibility and verify that thermal and electrical specifications meet or exceed the original design parameters.
The Gate Threshold Voltage (VGS(th)) ranges from 1V to 2.5V when tested at ID=250μA.
Yes, the datasheet specifies a repetitive avalanche energy rating of 135mJ at an inductance of 0.3mH.