AO4480

AO4480

$1.03
  • Description:SOP-8 MOSFETS ROHS
  • Series:UMW
  • Mfr:UMW
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:62714c7f8cb0 Category: Brand:

  
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Product Detailed Parameters

  • Description:SOP-8 MOSFETS ROHS
  • Series:UMW
  • Mfr:UMW
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:12mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1920 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SOP
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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AO4480

Overview

The UMW AO4480 is an N-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It features a Drain-Source Voltage (VDS) of 40V and a Continuous Drain Current (ID) of 14A at TA=25°C. The device offers low on-resistance, specified as less than 12mΩ at VGS=10V and less than 16mΩ at VGS=4.5V. It includes ESD protection rated at ±20V Gate-Source Voltage and supports a maximum junction temperature of 150°C.

Feature Summary

  • Advanced trench technology for excellent RDS(ON) and low gate charge
  • ESD protected structure
  • Suitable for use as a low side switch in SMPS and general purpose applications

Applications

  • Low side switching in Switching Mode Power Supplies (SMPS)
  • General purpose power switching applications

Procurement Notes

Verify the specific package variant and ordering code against the manufacturer's current documentation to ensure compatibility with design requirements. Confirm that the component meets all necessary environmental and safety standards required for the intended application before finalizing procurement decisions.

Selection Notes

Select this component based on its 40V voltage rating and 14A continuous current capability. Consider the thermal resistance characteristics and the requirement for low gate charge if high-frequency switching performance is critical for the target circuit design.

Part Context

The AO4480 belongs to the category of N-Channel MOSFETs manufactured by UMW (UTD Semiconductor Co., Limited). It is designed for power management applications requiring efficient switching capabilities within a compact SOP-8 package format.

Replacement Considerations

Cross-reference with other 40V N-Channel MOSFETs offering similar RDS(ON) and ID ratings. Ensure pinout compatibility and verify that thermal and electrical specifications meet or exceed the original design parameters.

FAQ

What is the typical gate threshold voltage range?

The Gate Threshold Voltage (VGS(th)) ranges from 1V to 2.5V when tested at ID=250μA.

Is the device suitable for repetitive avalanche operation?

Yes, the datasheet specifies a repetitive avalanche energy rating of 135mJ at an inductance of 0.3mH.

AO4480AO4480
$1.03
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