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Product Detailed Parameters
- Description：MOSFET N-CH 40V 14A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11.5mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1920 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AO4480 is a 40V N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and low gate charge, making it suitable for low-side switching in switch-mode power supplies (SMPS) and general-purpose applications. The device features an ESD rating of 4KV HBM and has undergone 100% UIS and Rg testing. Key electrical parameters include a drain-source voltage (VDS) of 40V, a continuous drain current (ID) of 14A at VGS=10V, and an on-resistance (RDS(ON)) of less than 11.5mΩ at VGS=10V and less than 15.5mΩ at VGS=4.5V.
Feature Summary
- Advanced trench technology provides excellent on-resistance and low gate charge characteristics.
- High electrostatic discharge protection capability with a 4KV HBM rating.
- Guaranteed reliability through 100% unclamped inductive switching (UIS) and gate resistance testing.
Applications
- Low-side switching in switch-mode power supplies (SMPS)
- General-purpose power switching applications
Procurement Notes
Verify the manufacturer source carefully, as multiple vendors produce components under this part number. Confirm that the specific datasheet aligns with the required 40V/14A specifications and trench technology description. Ensure the component meets the stated 4KV HBM ESD rating and 100% UIS test requirements if these are critical for your design. Check for RoHS compliance status if environmental regulations apply to your assembly process.
Selection Notes
Select the AO4480 when a 40V N-Channel MOSFET with high current handling capability is required for low-side switching. Its low gate charge and on-resistance make it efficient for SMPS designs. Consider the package type and thermal performance relative to your PCB layout. Verify that the drive voltage levels in your circuit support the specified RDS(ON) thresholds at both 10V and 4.5V gate drives.
Part Context
This component belongs to the family of N-Channel Enhancement Mode Field Effect Transistors from Alpha & Omega Semiconductor. It is designed for power management applications where efficiency and robustness are prioritized. The use of trench technology distinguishes it from older planar MOSFET technologies, offering improved performance metrics for modern power conversion circuits.
