AO4482

AO4482

$0.33
  • Description:MOSFET N-CH 100V 6A 8SOIC
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:6e3936b2ef45 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 100V 6A 8SOIC
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:37mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SOIC
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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AO4482

Overview

The AO4482 is a 100V N-Channel MOSFET from Alpha & Omega Semiconductor Inc. packaged in an SOIC-8 (SO8) surface-mount housing. It provides a continuous drain current of 6A at VGS=10V and features extremely low on-resistance, specified as less than 37mΩ at VGS=10V and less than 42mΩ at VGS=4.5V. The device supports a maximum gate-source voltage of ±20V and operates within a junction temperature range of -55°C to 150°C. It includes 100% UIS testing and avalanche energy ratings up to 61mJ.

Feature Summary

  • Advanced trench MOSFET technology combined with a low resistance package for extremely low RDS(ON).
  • Designed for high efficiency in boost converters and synchronous rectifiers.
  • Features 100% Unclamped Inductive Switching (UIS) testing for reliability.

Applications

  • Boost converters
  • Synchronous rectifiers
  • Consumer power supplies
  • Telecom power supplies
  • Industrial power supplies
  • LED backlighting

Procurement Notes

Verify the specific manufacturer part number against official Alpha & Omega Semiconductor documentation to ensure authenticity. Confirm that the component meets all required electrical specifications for your circuit design, particularly regarding thermal management and voltage ratings. Check for any recent product change notices or obsolescence announcements directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a 100V N-Channel MOSFET is required for applications needing low on-resistance and high efficiency. Consider its suitability for consumer, telecom, and industrial power supply designs where synchronous rectification is utilized. Ensure the PCB layout accommodates the SO8 package and provides adequate thermal dissipation for the intended operating conditions.

Part Context

The AO4482 belongs to the family of N-Channel Enhancement Mode Field Effect Transistors manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve superior performance characteristics compared to standard planar MOSFETs. This series is designed to meet the demands of modern power management applications requiring compact packaging and high switching efficiency.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided source material.

FAQ

What is the maximum drain-source voltage rating?

The maximum Drain-Source Voltage (BVDSS) is 100V.

Is the AO4482 tested for unclamped inductive switching?

Yes, the datasheet specifies that the device undergoes 100% Unclamped Inductive Switching (UIS) testing.

What is the typical total gate charge at VGS=10V?

The typical total gate charge (Qg) at VGS=10V is 36nC, with a maximum of 44nC.

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