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Product Detailed Parameters
- Description：SOP-8 MOSFETS ROHS
- Series：UMW
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：79mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：942 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOP
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The UMW AO4486 is a 100V N-Channel MOSFET utilizing advanced trench technology to achieve extremely low on-resistance. It supports a continuous drain current of 4.2A and a pulsed current of 31A. The device features a maximum junction temperature of 150°C and operates within a storage temperature range of -55°C to 150°C. Electrical characteristics include a gate threshold voltage between 1.6V and 2.7V, with an on-resistance of less than 79mΩ at VGS=10V and less than 94mΩ at VGS=4.5V. Total gate charge is specified as 16.3nC typ at 10V.
Feature Summary
- Advanced trench MOSFET technology for low resistance
- Suitable for boost converters and synchronous rectifiers
- High thermal stability up to 150°C junction temperature
Applications
- Consumer power supplies
- Telecom power supplies
- Industrial power supplies
- LED backlighting circuits
Procurement Notes
Verify the specific manufacturer marking and lot code against the official UTD Semiconductor datasheet to confirm authenticity. Ensure the package matches the SOP-8 outline dimensions provided in the documentation. Check for RoHS compliance status if required by your manufacturing standards. Confirm that the ordering suffix corresponds to the tape and reel delivery mode specified.
Selection Notes
Select this component when a 100V rating is required for synchronous rectification or boost conversion applications. Consider the low RDS(ON) values at both 10V and 4.5V gate drive levels for efficiency optimization. Evaluate the thermal performance based on the specific PCB copper area and airflow conditions, as the junction-to-ambient resistance varies significantly with board design.
Part Context
This part belongs to the AO4486 series of N-Channel MOSFETs manufactured by UMW (UTD Semiconductor). It is designed as a general-purpose power switch for medium-current applications. The device integrates high-density cell architecture to minimize conduction losses while maintaining robust avalanche capabilities for inductive load switching.
Replacement Considerations
Direct replacements must match the 100V VDS, 4.2A ID, and SOP-8 package. Verify pinout compatibility and electrical parameters such as RDS(ON) and Qg. Cross-reference with other manufacturers' 100V N-Channel MOSFETs offering similar trench technology and thermal characteristics.
