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The AO4576 is a 30V N-Channel AlphaMOS MOSFET in an SOIC-8 package. It utilizes advanced trench technology to achieve low on-resistance and gate charge. Key electrical parameters include a drain-source voltage of 30V, continuous drain current of 20A at VGS=10V, and RDS(ON) less than 5.8mΩ at VGS=10V or 9.8mΩ at VGS=4.5V. The device features a maximum junction temperature of 150°C and power dissipation of 3.1W at TA=25°C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and compliance status. Confirm that the component meets RoHS and Halogen-Free requirements as stated in the datasheet. Ensure the procurement channel provides valid traceability for the Alpha & Omega Semiconductor part number AO4576.
Select this component for designs requiring a 30V N-Channel MOSFET with low static resistance at both 10V and 4.5V drive levels. The SOIC-8 package suits surface-mount applications where space is constrained. Verify thermal management capabilities based on the specified junction-to-ambient resistance values for the intended operating environment.
The AO4576 belongs to the AlphaMOS family from Alpha & Omega Semiconductor Inc., designed for power switching efficiency. It is an N-Channel enhancement mode field-effect transistor utilizing trench technology. The device is electrically characterized for use in general-purpose power management circuits within computing and industrial sectors.
No public confirmed substitute part numbers are documented in the provided source material.
The maximum continuous drain current is 20A when measured at a gate-source voltage of 10V.
Yes, the datasheet specifies that the AO4576 undergoes 100% UIS testing.