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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 6A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta), 6.5A (Ta)
- Rds On (Max) @ Id, Vgs：30mOhm @ 6A, 10V, 28mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 10V, 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：310pF @ 15V, 760pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AO4606 is a complementary enhancement mode field effect transistor utilizing advanced trench technology. It integrates an N-channel and a P-channel MOSFET within a single SOIC-8 package. The N-channel device supports a drain-source voltage of 30V with a continuous drain current of 6A at VGS=10V, while the P-channel device handles -30V and -6.5A at VGS=-10V. On-resistance values are less than 30mΩ for the N-channel and 28mΩ for the P-channel at 10V gate drive. Both transistors are tested for unclamped inductive switching (UIS) capability and feature low gate charge characteristics suitable for high-frequency switching applications.
Feature Summary
- Advanced trench technology provides excellent on-resistance and low gate charge performance.
- Complementary configuration allows for level-shifted high-side switching implementations.
- Both N-channel and P-channel devices undergo 100% UIS testing for reliability.
Applications
- Level shifted high side switch circuits
- General purpose power switching applications
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches the required SOIC-8 footprint. Ensure thermal management design accounts for junction-to-ambient resistance values provided in the datasheet to maintain safe operating temperatures during operation.
Selection Notes
Select this component when a compact complementary pair is required for low-voltage switching tasks. Evaluate gate charge requirements against driver capabilities to ensure efficient switching speeds. Consider thermal dissipation limits based on expected duty cycles and ambient conditions to prevent junction temperature exceedance.
Part Context
This part belongs to Alpha & Omega Semiconductor's complementary MOSFET portfolio. It is designed for consumer market applications where space efficiency and switching performance are prioritized. The dual-transistor integration simplifies circuit board layout compared to using discrete components.
Replacement Considerations
Direct substitutes include other 30V complementary MOSFETs in SOIC-8 packages from various manufacturers. Verify pinout compatibility and electrical parameters such as RDS(ON) and ID ratings before substitution.
FAQ
What is the maximum junction temperature for the AO4606?
The maximum junction temperature is 150°C.
Are both transistors in the AO4606 tested for UIS?
Yes, both the N-channel and P-channel devices are 100% UIS tested.
What is the typical gate threshold voltage range?
The gate threshold voltage ranges from 1.2V to 2.4V for the N-channel and -1.3V to -2.4V for the P-channel.
