AO4614B_101

AO4614B_101

  • Description:MOSFET N/P-CH 40V 6A/5A 8SOIC
  • Series:-

SKU:7dc603e673d9 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N/P-CH 40V 6A/5A 8SOIC
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:6A, 5A
  • Rds On (Max) @ Id, Vgs:30mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:650pF @ 20V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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AO4614B_101

Overview

The AO4614B is a complementary enhancement mode field effect transistor utilizing advanced trench technology. It integrates an N-channel and a P-channel MOSFET within a single SOIC-8 surface-mount package. The N-channel device supports a drain-source voltage of 40V with a continuous drain current of 6A at VGS=10V, while the P-channel counterpart handles -40V and -5A at VGS=-10V. Both channels are rated for a maximum junction temperature of 150°C and feature low on-resistance values of less than 30mΩ (N-channel) and 45mΩ (P-channel) at VGS=10V.

Feature Summary

  • Complementary dual-channel configuration in a compact SOIC-8 package
  • Advanced trench technology providing low gate charge and excellent on-resistance
  • Validated for high reliability through 100% UIS and Rg testing

Applications

  • H-bridge circuits
  • Inverters

Procurement Notes

Verify component authenticity by matching the part number against official Alpha & Omega Semiconductor documentation. Confirm that the physical marking on the SOIC-8 package aligns with the manufacturer's standard identification codes. Ensure compliance with RoHS standards as specified in the datasheet before finalizing procurement orders.

Selection Notes

Select this component when a matched pair of N-channel and P-channel MOSFETs is required for synchronous switching applications. The complementary electrical characteristics simplify driver design compared to using discrete transistors. Verify that the thermal management strategy accommodates the steady-state junction-to-ambient thermal resistance of 74°C/W for both channels.

Part Context

This component belongs to the Alpha & Omega Semiconductor lineup of complementary enhancement mode field effect transistors. It is designed specifically for consumer market applications where space efficiency and switching performance are prioritized. The integrated nature of the N and P channels reduces board footprint compared to separate discrete components.

Replacement Considerations

The AO4614BL is electrically identical to the AO4614B but offers halogen-free material composition. Verify pinout compatibility and thermal characteristics if substituting with other complementary MOSFET pairs from different manufacturers.

AO4614B_101AO4614B_101

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