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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 8A/7A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A, 7A
- Rds On (Max) @ Id, Vgs：20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：888pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AO4616L_102 is a complementary N- and P-channel MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The N-channel device supports a drain-source voltage of 30V with a continuous current of 8A at VGS=10V, while the P-channel device handles -30V and -7A at VGS=-10V. Both channels are rated for a maximum junction temperature of 150°C and feature 100% UIS testing. The component is housed in an SOIC-8 package.
Feature Summary
- Complementary N-Channel and P-Channel configuration
- Advanced trench technology for low RDS(ON)
- Low gate charge characteristics
- 100% Unclamped Inductive Switching (UIS) tested
Applications
- Low input voltage inverter applications
- General purpose switching
- Load switching circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and environmental compliance status. Ensure the component meets RoHS requirements if applicable to the design. Cross-reference the datasheet revision date to validate electrical parameters before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring matched N- and P-channel performance in a compact surface-mount footprint. Evaluate thermal management requirements based on the specified junction-to-ambient resistance values. Confirm that the gate drive voltage levels align with the threshold and on-resistance specifications provided in the electrical characteristics tables.
Part Context
The AO4616 series represents a complementary MOSFET pair designed for efficiency in power conversion. The 'L' suffix typically denotes a lead-free or green product variant compliant with specific environmental standards, though exact functional differences depend on the manufacturer's definition. This part belongs to a family of trench technology MOSFETs optimized for low-voltage applications.
Replacement Considerations
Direct replacements must match the 30V rating, SOIC-8 package, and complementary channel configuration. Verify that substitute components offer comparable RDS(ON) and gate charge values to maintain switching performance. Check for identical pinout assignments to ensure board compatibility without redesign.
