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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：23mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1100pF @ 10V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AO4622 is a complementary enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It integrates an N-channel and a P-channel MOSFET within a single package, utilizing advanced trench technology to achieve low on-resistance and minimal gate charge. The device supports a drain-source voltage of 20V for the N-channel and -20V for the P-channel. Continuous drain current ratings are specified at 7.3A for the N-channel and -5A for the P-channel at VGS=4.5V. On-resistance values include less than 23mΩ for the N-channel at VGS=10V and less than 87mΩ for the P-channel at VGS=-4.5V.
Feature Summary
- Complementary N-Channel and P-Channel configuration enables level-shifted high-side switching applications
- Advanced trench technology provides excellent RDS(ON) performance with low gate charge characteristics
- Manufactured with 100% UIS (Unclamped Inductive Switching) testing for enhanced reliability
Applications
- Level shifted high side switch circuits
- Power management modules requiring complementary logic-level control
- General purpose power switching applications
Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm datasheet revisions match production batches. Ensure storage conditions adhere to moisture sensitivity levels defined in the handling guidelines. Validate pinout compatibility during integration to prevent circuit damage.
Selection Notes
Select this component when a compact solution for high-side switching is required without external driver complexity. Compare RDS(ON) specifications against load requirements to ensure thermal efficiency. Verify that the 20V voltage rating exceeds peak circuit transients. Consider the complementary nature for bridge configurations or synchronous rectification needs.
Part Context
This part belongs to the Alpha & Omega Semiconductor complementary MOSFET family, designed for efficient power control. It serves as a dual-transistor solution replacing discrete N and P-channel pairs, reducing board space and assembly steps while maintaining high switching performance standards typical of trench technology devices.
Replacement Considerations
Direct substitutes include AO4600, AO4607, and AO4611 from the same manufacturer series. Verify pinout alignment and electrical parameters such as VDS and ID before substitution. Cross-reference with generic complementary MOSFETs only if exact specifications are unavailable.
